GATE Prev Year : Analog Circuits Test-2

Question 1

In the silicon BJT circuit shown below, assume that the emitter area of transistor Q1 is half that of transistor Q2.

The value of current I0 is approximately

  • A0.5 mA
  • B2mA
  • C9.3 mA
  • D15mA

Question 2

The circuit in Figure is a
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2004_files\image033.jpg

  • Alow-pass filter
  • Bhigh-pass filter
  • Cband-pass filter
  • Dband-reject filter

Question 3

A MOSFET in saturation has a drain current of 1 mA for VDS = 0.5 V. If the channel length modulation coefficient is 0.05 V–1, the output resistance (in kΩ) of the MOSFET is _______.

  • A25
  • B18
  • C20
  • D30
Consider the common emitter amplifier shown below with the following circuit parameters:
b =100, gm = 0.3861 A/V, r0 = ∞, rp = 259 W, RS = 1k W,
RB = 93K W, RC = 250 W, RL=1k W, C1=∞ and C2 = 4.7mF.

Question 4

The resistance seen by the source Vs is

  • A258 Ω
  • B1258 Ω
  • C93 KΩ
  • D
Consider the common emitter amplifier shown below with the following circuit parameters:
b =100, gm = 0.3861 A/V, r0 = ∞, rp = 259 W, RS = 1k W,
RB = 93K W, RC = 250 W, RL=1k W, C1=∞ and C2 = 4.7mF.

Question 5

The lower cut-off frequency due to C2 is

  • A33.9 Hz
  • B27.1 Hz
  • C13.6 Hz
  • D16.9 Hz

Question 6

Assuming that the opamp in the circuit shown below is ideal, the output voltage V0 (in volts) is______
Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image225.png

  • A10 Volts
  • B12.5 Volts
  • C12 Volts
  • D15 Volts
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